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SiB433EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
t 1
t 2
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 105 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability
data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/
tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65652 .
www.vishay.com
6
For technical support, please contact: pmostechsupport@vishay.com
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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